SiGe HBTs Optimization for Wireless Power Amplifier Applications

SiGe HBTs Optimization for Wireless Power Amplifier Applications

Blog Article

This paper deals with SiGe HBTs optimization for power amplifier applications dedicated to wireless communications.In this work, we investigate the fT-BVCEO tradeoff by various collector optimization schemes such as epilayer Girls Fall Casual Dress thickness and dopant concentration, and SIC and CAP characteristics.Furthermore, a new trapezoidal base Germanium (Ge) profile is proposed.Thanks to this profile, precise control of Ge content at the metallurgical emitter-base junction is obtained.

Gain stability is obtained for a wide range of temperatures through tuning the emitter-base junction Ge percent.Finally, a comprehensive investigation of Ge introduction into the collector (backside Ge profile) is conducted in Shorts order to improve the fT values at high injection levels.